A Fresh Look at the Semiconductor Bandgap Using Constant Current Data

Autor/inn/en	Ocaya, R. O.; Luhanga, P. V. C.
Titel	A Fresh Look at the Semiconductor Bandgap Using Constant Current Data
Quelle	In: European Journal of Physics, 32 (2011) 5, S.1155-1161 (7 Seiten) PDF als Volltext Verfügbarkeit
Sprache	englisch
Dokumenttyp	gedruckt; online; Zeitschriftenaufsatz
ISSN	0143-0807
DOI	10.1088/0143-0807/32/5/003
Schlagwörter	Physics; Laboratories; Climate; Undergraduate Study; Theories; Evaluation Methods; Experiments; Laboratory Equipment; Data Analysis; Research Methodology + Suchen Sie Ihr Suchwort? Physik; Laboratory; Laboratorium; Klima; Grundstudium; Theory; Theorie; Erprobung; Laborausstattung; Auswertung; Research method; Forschungsmethode
Abstract	It is shown that the well-known linear variation of p-n diode terminal voltage with temperature at different fixed forward currents allows easy and accurate determination of the semiconductor ideality factor and bandgap from only two data points. This is possible if the temperature difference required to maintain the same diode voltage drop can be measured. The results for silicon and germanium bandgap energy using this approach are in excellent agreement with the literature. The method therefore provides a fresh and original insight into the derivation of the bandgap using data from a popular experiment. The experiment is suitable for undergraduate laboratories on semiconductors. (Contains 2 tables and 3 figures.) (As Provided).
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Erfasst von	ERIC (Education Resources Information Center), Washington, DC
Update	2017/4/10